The Silicon PhotoMultiplier (SiPM) represents a relatively new semiconductor photon detector which offers performances comparable or even better than conventional photon detectors (e.g. PMT, HPD, PN or PIN, APD). Following a very fast technological development, different institutes/ companies are involved today in the SiPM production: Russian (CPTA, PULSAR, JINR), Japanese (Hamamatsu), Italian (ITC-irst), French (LAAS), Germaine (MPI), Irelands (SensL).
An activity related to the characterization of different SiPM production devices is under progress at LAL. A hard-ware set-up for devices measurements in dark conditions has been already built and important characteristics have been studied: the DC parameters (e.g. leakage current, breakdown voltage, quenching resistance) as well as the AC parameters (e.g. gain, dark count rate, cross-talk). A more complex set-up for light measurements (e.g. photon detection efficiency, linearity) is under development.
A general presentation of the SiPM work principle will be given. Then, a description of the hard-ware set-up developed at LAL as well as the obtained results related to the characteristics of different SiPM devices will be presented.
