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Séminaires généraux

SOI Monolithic Pixel Detector Technology

par Yasuo Arai (KEK)

Europe/Paris
Salle 101 (LAL)

Salle 101

LAL

Bât.200
Description
We have been developing monolithic pixel detectors by using a Silicon-On- Insulator (SOI) technology. The SOI technology uses bonded wafer of two silicon wafer sandwiching a thin oxide layer. They can have fully-depleted sensing region and CMOS readout circuits in a pixel. Although there were several difficult issues in the SOI pixel process, we proved to have solved these issues by developing new technologies such as buried well and double SOI wafer/process. We showed less than 1um position resolution is available in a vertex detector, and less than 15 electron noise level in a X-ray detector. The process technologies and several examples of SOI detectors are presented.
Poster
Transparents